Volume 15, Issue 10 · IJARST · ISSN 2319-1783 / 2320-1126

Three-Dimensional Hydrostatic and Biaxial Strain Distributions in a Pyramidal InAs/GaAs Quantum Dot: An Aspect-Ratio-Based Computational Analysis

Three-Dimensional Hydrostatic and Biaxial Strain Distributions in a Pyramidal InAs/GaAs Quantum Dot: An Aspect-Ratio-Based Computational Analysis is an open-access, peer-reviewed research paper by Hasan Hamada Ali, published in Volume 15, Issue 10 of the International Journal of Advanced Research in Science and Technology (IJARST), a UGC-approved journal (Print ISSN 2319-1783, Online ISSN 2320-1126).

Author

Hasan Hamada Ali

Abstract

Strain induced by lattice mismatch is a fundamental characteristic of self-assembled InAs/GaAs quantum dots and plays an important role in determining their local mechanical state and, consequently, their potential electronic and optoelectronic behavior. In this work, an aspect-ratio-dependent computational strain library built inside a MATLAB-based reconstruction framework is used to examine the three-dimensional distributions of hydrostatic and biaxial strain in a square-based pyramidal InAs/GaAs quantum dot. The computational method uses geometric symmetry expansion and three-dimensional spatial interpolation to obtain the strain distribution over the specified computational domain by reconstructing the spatial strain field from precomputed strain data corresponding to chosen quantum-dot aspect ratios. The normal components of the strain tensor are used to derive the hydrostatic and biaxial strain components, which offer complementary explanations of the local deformation. The biaxial strain is defined as ε_B=ε_xx+ε_yy-2ε_zz, which represents the directional difference between the in-plane and growth-direction deformation, while the hydrostatic strain is defined as ε_H=ε_xx+ε_yy+ε_zz, which represents the volumetric component of deformation. The analysis takes into consideration the significant lattice mismatch between ln⁡As and GaAs and investigates the spatial properties of the reconstructed strain fields with respect to the aspect ratio and pyramidal quantum-dot geometry. A highly non-uniform strain distribution is revealed by the reconstructed three-dimensional data, especially in the quantum-dot region and close to the InAs/GaAs heterointerface. Within the InAs quantum dot, the hydrostatic strain responds primarily in a compressive manner before gradually relaxing spatially toward the surrounding GaAs matrix. The anisotropic nature of the local deformation and the distinction between the in-plane and growth-direction strain components are reflected in the biaxial strain's more varied distribution. The minimum and maximum strain values, along with the accompanying spatial coordinates, centerline profiles, cross-sectional distributions, interface behavior, and spatial relaxation, are used for quantitative characterization. Beyond the qualitative interpretation of color maps, these characteristics offer a repeatable foundation for assessing the reconstructed strain field. The findings show that the amount and spatial localization of the reconstructed hydrostatic and biaxial strain components are influenced by lattice mismatch, quantum-dot geometry, and aspect ratio. The resulting three-dimensional strain fields can be used as input for later deformation-potential, multiband k⋅p, or atomistic electronic-structure computations, and they offer a quantitative mechanical description of the pyramidal InAs/GaAs quantum-dot system. Crucially, the current study does not explicitly compute electronic band structures, carrier wave functions, optical transition energies, emission spectra, carrier transport, or device performance; instead, it is limited to mechanical strain reconstruction. Therefore, conclusions concerning these properties require an additional electronic-structure model.

Keywords: Hydrostatic strain, biaxial strain, lattice mismatch, aspect ratio, three-dimensional strain distribution, strain reconstruction, InAs/GaAs quantum dot, pyramidal quantum dot, and semiconductor nanostructures.

DOI: https://doi.org/10.62226/ijarst20262858

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DOI

10.62226/ijarst20262858

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How do you cite this paper?

Hasan Hamada Ali — “Three-Dimensional Hydrostatic and Biaxial Strain Distributions in a Pyramidal InAs/GaAs Quantum Dot: An Aspect-Ratio-Based Computational Analysis.” International Journal of Advanced Research in Science and Technology (IJARST), Volume 15, Issue 10. DOI: 10.62226/ijarst20262858.

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