Volume 12, Issue 6 · IJARST · ISSN 2319-1783 / 2320-1126

Theoretical study of High-pressure compression of Nano Sized Germanium and Silicon

Theoretical study of High-pressure compression of Nano Sized Germanium and Silicon is an open-access, peer-reviewed research paper by Rajendra K. Mishra*1 , Om Prakash Gupta2, published in Volume 12, Issue 6 of the International Journal of Advanced Research in Science and Technology (IJARST), a UGC-approved journal (Print ISSN 2319-1783, Online ISSN 2320-1126).

Author

Rajendra K. Mishra*1 , Om Prakash Gupta2

Abstract

Abstract:

High pressures have been employed to examine the pressure-induced structural and mechanical characteristics of nanocrystalline Ge and Si with different grain sizes in the current work. Volume collapse in nano and bulk phases at low and high pressures was determined by authors using the isothermal equation of states Vineet, Birch-Murnaghan, and Suzuki based on a molecular dynamic’s simulation model. The acquired result was found that the high-pressure properties depend meaningfully on the particle sizes, the 4.1-nm Si nanoparticle skilled a higher decrease in volume value than the diameter of 10.3 nm but 13nm Ge particle shows a smaller reduction in volume than 49nm and 100nm sizes nanoparticles. The results of the various EOSs agreed with one another, suggesting that the EOSs of bulk materials may be used in the computations of nanoparticles.

DOI

https://doi.org/10.62226/ijarst20231136

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How do you cite this paper?

Rajendra K. Mishra*1 , Om Prakash Gupta2 — “Theoretical study of High-pressure compression of Nano Sized Germanium and Silicon.” International Journal of Advanced Research in Science and Technology (IJARST), Volume 12, Issue 6. DOI: https://doi.org/10.62226/ijarst20231136.

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