Volume 4, Issue 5

Implementation of a 4T DRAM element for faster digital system applications.

Author

Vamsi. J* and B. Rambabu

Abstract

This paper deals with analysis of average power consumption of dram cell designs for the nanometer scale memories. These DRAMs are used in many modern processors’ internal memory. The major contributor of power in dram is the off state leakage current. Improving the power efficiency of a dram cell is critical for the improvement in average power consumption of the overall system. 3T dram cell, 4T dram cells are designed by using TANNER EDA tool and their average power consumption are compared. Average power consumption, write access time, read access time and retention time of 4T, 3T DRAM cell are simulated and compared on 32 nm technology.

DOI

*

PAGES : 481-484 | 37 VIEWS | 84 DOWNLOADS


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Vamsi. J* and B. Rambabu | Implementation of a 4T DRAM element for faster digital system applications. | DOI : *

Journal Frequency: ISSN 2320-1126, Monthly
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Acceptance Notification: Within 6 days
Subject Areas: Engineering, Science & Technology
Publishing Model: Open Access
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